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參數(shù)資料
| 型號(hào)： | ND2012L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Depletion-Mode MOSFET Transistors(最大漏源導(dǎo)通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET晶體管) |
| 中文描述： | N溝道耗盡型MOSFET晶體管（最大漏源導(dǎo)通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET的晶體管） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | ND2012L |
ND2012L/2020L
2
Siliconix
S-52426—Rev. C, 14-Apr-97
Specifications
a
Limits
ND2012L
ND2020L
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Drain Source Breakdown Voltage
Drain-Source Breakdown Voltage
V
(BR)DSV
V
GS
= –8 V, I
D
= 10 A
220
200
V
GS
= –5 V, I
D
= 10 A
220
200
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 5 V, I
D
= 10 A
–1.5
–4
–0.5
–2.5
Gate Body Leakage
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
10
10
nA
=
50
50
V
DS
= 160 V, V
GS
= –8 V
1
Drain Cutoff Current
D( ff)
I
D(off)
=
200
A
V
DS
= 160 V, V
GS
= –5 V
1
=
200
Drain-Saturation Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
300
30
30
mA
V
GS
= 2 V, I
D
= 20 mA
7
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 0 V, I
D
= 20 mA
8
12
20
=
12.6
30
50
Forward Transconductance
c
g
fs
= 7 5 V I
V
DS
= 7.5 V, I
D
= 20 mA
55
mS
Common Source Output Conductance
c
g
os
75
S
Dynamic
Input Capacitance
C
iss
35
100
100
Output Capacitance
C
oss
V
DS
= 25 V, V
GS
= –5 V, f = 1 MHz
10
20
20
pF
Reverse Transfer Capacitance
C
rss
2
5
5
Switching
d
Turn On Time
Turn-On Time
t
d(on)
20
t
r
25
20
20
ns
Turn-Off Time
t
d(off)
10
t
f
10
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
For DESIGN AID ONLY, not subject to production testing.
Pulse test: PW
300 s duty cycle
Switching time is essentially independent of operating temperature.
VDDQ20
2%.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ND2012L-TR1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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