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參數(shù)資料
| 型號(hào)： | ND2012L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Depletion-Mode MOSFET Transistors(最大漏源導(dǎo)通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET晶體管) |
| 中文描述： | N溝道耗盡型MOSFET晶體管（最大漏源導(dǎo)通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET的晶體管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | ND2012L |
ND2012L/2020L
Siliconix
S-52426—Rev. C, 14-Apr-97
3
Typical Characteristics (25 C Unless Otherwise Noted)
Output Characteristics (ND2020)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. DrainCurrent
Transfer Characteristics (ND2012)
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
–
I
D
–
I
D
–
I
D
–
r
D
)
V
DS
– Drain-to-Source Voltage (V)
V
DS
– Drain-to-Source Voltage (V)
Output Characteristics (ND2012)
Transfer Characteristics (ND2020)
–
I
D
V
GS(off)
– Gate-Source Cutoff Voltage (V)
I
D
– Drain Current (mA)
100
80
60
0
0
0.4
2
40
20
0.8
1.2
1.6
0 V
–1 V
–1.5 V
–2 V
–0.5 V
–2.5 V
500
400
300
0
–4.5
–3.5
0.5
200
100
–2.5
–1.5
–0.5
125 C
T
C
= –55 C
100
0
0.4
0.8
1.2
1.6
2
80
60
40
20
0
0.2 V
–0.2 V
0 V
–0.4 V
–0.6 V
–0.8 V
–1 V
–1.4 V
–1.2 V
200
160
120
80
40
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
–55 C
T
C
= 125 C
25 C
25
20
15
0
0
–1
–5
10
5
–2
–3
–4
1000
800
600
0
400
200
r
DS(on)
I
DSS
r
DS
@ I
D
= 20 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 7.5 V, V
GS
= 0 V
10
100
1 K
25
20
0
15
10
5
ND2020
ND2012
V
GS
= 0 V
–
I
D
25 C
V
DS
= 10 V
V
DS
= 10 V
V
GS
= 2 V
V
GS
= 5 V
–
r
D
)
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