參數(shù)資料
型號: NCV7510
廠商: ON SEMICONDUCTOR
英文描述: FlexMOS Programmable Peak and Hold PWM MOSFET Predriver
中文描述: FlexMOS可編程峰值和保持MOSFET的預(yù)驅(qū)動器的PWM
文件頁數(shù): 6/22頁
文件大小: 160K
代理商: NCV7510
NCV7510
http://onsemi.com
6
MAXIMUM RATINGS
(
Voltages are with respect to device substrate.)
Rating
Symbol
Value
Unit
DC Supply Voltage (Note 1)
VDRN
0.3 to 45
V
V
DD
0.3 to 7.0
V
VDRN Peak Transient Voltage (Note 2)
VDRN
(PK)
45
V
VB Pin Voltage
V
B
2.0 to 50
V
GATE Pin Voltage
V
GATE
2.0 to 50
V
VB to GATE Differential Voltage
V
B
V
GATE
50
V
SRC Pin Voltage
V
SRC
2.0 to 45
V
Logic Level Input/Output Voltage
(SO, SI, SCLK, CSB, ENA, CONTROL, PCLK, FAULT, LOOP)
V
I/O
0.3 to 7.0
V
Sense Amplifier Input Voltage
V
SNS+
0.3 to 45
V
V
SNS
0.3 to 7.0
V
Overcurrent Comparator Input Voltage
V
OCP
0.3 to 7.0
V
Junction Temperature
Tj
150
°
C
Storage Temperature Range
T
stg
65 to 150
°
C
Peak Reflow Soldering Temperature: Leadfree (60 to 150 seconds at 217
°
C)
(Note 3)
265 peak
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Reverse VDRN protection must be included in the application circuit.
2. VDRN transient voltage suppression must be included in the application circuit.
3. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D,
and Application Note AND8003/D.
ATTRIBUTES
Characteristic
Value
Unit
ESD Capability (All Pins)
Human Body Model
Charged Device Model
> 3.0
> 1.0
kV
kV
Moisture Sensitivity
(Note 3)
MSL 1
Package Thermal Resistance
Junction–to–Ambient, R
JA
Junction–to–Case, R
JC
55
9.0
°
C/W
°
C/W
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