參數(shù)資料
型號: NCV7510
廠商: ON SEMICONDUCTOR
英文描述: FlexMOS Programmable Peak and Hold PWM MOSFET Predriver
中文描述: FlexMOS可編程峰值和保持MOSFET的預驅(qū)動器的PWM
文件頁數(shù): 13/22頁
文件大?。?/td> 160K
代理商: NCV7510
NCV7510
http://onsemi.com
13
BASIC OPERATING DESCRIPTION (continued)
Hysteretic Control
The NCV7510 employs hysteretic control to achieve the
programmed peak and hold currents. The IC measures the
load current via an external sense resistor (See Functional
Block Diagram on page 2 and Application Diagram on
page 3). This voltage is applied to a differential amplifier’s
SNS+ and SNS inputs. The amplified signal is then
compared to the programmed peak and hold reference levels
generated from the 7bit D/A converter. (Refer to Figure 11)
During the peak event, the load current is compared to the
programmed values in the peak high and peak low registers
for the duration of the programmed dwell time. The
hysteretic controller will switch between the programmed
peak high and peak low values at a PWM rate determined by
the load supply voltage, the load characteristics, the peak
and valley current levels, and the response times of the
NCV7510 and external MOSFETs. When the dwell time has
been reached, the controller will select the programmed
values in the hold high and hold low registers and the load
current will then be compared to these values. The hysteretic
PWM rate for the hold event is dependent on the same
factors as the peak event.
When the ENA and CONTROL inputs are brought high,
the dwell timer is initialized and the MOSFET drive control
circuit selects the GATE predrive output, activating the high
side MOSFET and allowing current to increase in the load.
When the peak high current level is reached, the MOSFET
drive control circuit will turn off the GATE predrive and then
turn on the CLAMP predrive. With the high side MOSFET
turned off, current in the load will begin to decrease. When
the peak low current level is reached, the MOSFET drive
control circuit will turn off the CLAMP predrive and then
turn on the GATE predrive. The peak event may be
terminated before the end of the programmed dwell time by
bringing either the ENA or CONTROL input low.
Otherwise, the peak high/low cycle repeats for the duration
of the peak dwell time.
Once the peak dwell time has been reached, the hysteretic
MUX control circuit will switch from the peak high and peak
low registers and now use the hold high and hold low
registers. Operation in this mode is quite the same as
described above for the peak event, except that the
programmed hold currents are now used to reduce power
dissipation in the load. The complete peak and hold event is
terminated when ENA or CONTROL is brought low.
16Bit
SPI
7Bit Peak High
7Bit Peak Low
7Bit Hold High
7Bit Hold Low
7Bit Auxiliary
8Bit Dwell
7Bit
DAC
Registers
Down
Counter
MUX
Prescaler
Predriver
5Bit Fault
PCLK
R
SNS
V
BAT
V
B
Sense
Amp
Overcurrent
Comparator
Peak/Hold
Comparator
R
A
R
B
V
DD
L
V
DD
3V REF
OCP
4.5V
OCP
Select
÷
20
MUX
GATE
CLAMP
C1
C2
C3
A1
Figure 11. Hysteretic MUX Control Block Diagram
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相關代理商/技術參數(shù)
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NCV7510DWR2 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:FlexMOS Programmable Peak and Hold PWM MOSFET Predriver
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NCV7512FTG 功能描述:功率驅(qū)動器IC ANA HEX LO-SD PREDRV RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube