參數(shù)資料
型號(hào)： NCV7356D2R2G
廠商： ON Semiconductor
文件頁(yè)數(shù)： 20/24頁(yè)
文件大小： 0K
描述： IC TXRX CAN SGL WIRE 14-SOIC
標(biāo)準(zhǔn)包裝： 1
類(lèi)型： 收發(fā)器
驅(qū)動(dòng)器/接收器數(shù)： 1/1
規(guī)程： CAN
電源電壓： 5 V ~ 27 V
安裝類(lèi)型： 表面貼裝
封裝/外殼： 14-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 14-SOICN
包裝： 剪切帶 (CT)
其它名稱(chēng)： NCV7356D2R2GOSCT
NCV7356
http://onsemi.com
5
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC. The maximum ratings given in
the table below are limiting values that do not lead to a
permanent damage of the device but exceeding any of these
limits may do so. Long term exposure to limiting values
may affect the reliability of the device.
MAXIMUM RATINGS
Rating
Symbol
Condition
Min
Max
Unit
Supply Voltage, Normal Operation
VBAT
0.3
18
V
ShortTerm Supply Voltage, Transient
VBAT.LD
Load Dump; t < 500 ms
40
V (peak)
Jump Start; t < 1.0 min
27
V
Transient Supply Voltage
VBAT.TR1
ISO 7637/1 Pulse 1 (Note 2)
50
V
Transient Supply Voltage
VBAT.TR2
ISO 7637/1 Pulses 2 (Note 2)
100
V
Transient Supply Voltage
VBAT.TR3
ISO 7637/1 Pulses 3A, 3B
200
V
CANH Voltage
VCANH
VBAT < 27 V
20
40
V
VBAT = 0 V
40
Transient Bus Voltage
VCANHTR1
ISO 7637/1 Pulse 1 (Note 3)
50
V
Transient Bus Voltage
VCANHTR2
ISO 7637/1 Pulses 2 (Note 3)
100
V
Transient Bus Voltage
VCANHTR3
ISO 7637/1 Pulses 3A, 3B (Note 3)
200
V
DC Voltage on Pin LOAD
VLOAD
Via RT > 2.0 kW
40
V
DC Voltage on Pins TxD, MODE1, MODE0, RxD
VDC
0.3
7.0
V
ESD Capability of CANH
VESDBUS
Human Body Model
(with respect to VBAT and GND)
Eq. to Discharge 100 pF with 1.5 kW
4000
V
ESD Capability of Any Other Pin
VESD
Human Body Model
Eq. to Discharge 100 pF with 1.5 kW
2000
V
Maximum Latchup Free Current at Any Pin
ILATCH
500
mA
Storage Temperature
TSTG
55
150
°C
Junction Temperature
TJ
40
150
°C
Lead Temperature Soldering
Reflow: (SMD styles only)
SOIC14
Tsld
60 s 150 s above 183°C
240 peak
°C
SOIC8
60 s 150 s above 217°C
260 peak
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. ISO 7637 test pulses are applied to VBAT via a reverse polarity diode and >1.0 mF blocking capacitor.
3. ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1.0 nF.
4. ESD measured per Q100002 (EIA/JESD22A114A).
TYPICAL THERMAL CHARACTERISTICS
Parameter
Test Condition, Typical Value
Unit
Min Pad Board
1, Pad Board
SOIC8
JunctiontoLead (psiJL7, YJL8) or Pins 67
57 (Note 5)
51 (Note 6)
°C/W
JunctiontoAmbient (RqJA, qJA)
187 (Note 5)
128 (Note 6)
°C/W
SOIC14
JunctiontoLead (psiJL8, YJL8)
30 (Note 7)
30 (Note 8)
°C/W
JunctiontoAmbient (RqJA, qJA)
122 (Note 7)
84 (Note 8)
°C/W
5. 1 oz copper, 53 mm2 coper area, 0.062″ thick FR4.
6. 1 oz copper, 716 mm2 coper area, 0.062″ thick FR4.
7. 1 oz copper, 94 mm2 coper area, 0.062″ thick FR4.
8. 1 oz copper, 767 mm2 coper area, 0.062″ thick FR4.
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