參數(shù)資料
型號(hào): NCR169DRLRA
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: General Purpose Sensitive Gate Silicon Controlled Rectifier
中文描述: 0.8 A, 400 V, SCR, TO-92
封裝: PLASTIC, CASE 029-11, TO-226AA, 3 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 67K
代理商: NCR169DRLRA
NCR169D
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance – Junction to Case
– Junction to Ambient
R
θ
JC
R
θ
JA
75
200
°
C/W
Lead Solder Temperature
(
1/16
from case, 10 secs max)
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or
Reverse Blocking Current (Note 1.)
(V
D
= Rated V
DRM
and V
RRM
; R
GK
= 1.0 k
)
ON CHARACTERISTICS
T
C
= 25
°
C
T
C
= 110
°
C
I
DRM
, I
RRM
10
0.1
μ
A
mA
Peak Forward On–State Voltage
(*)
(I
TM
= 1.0 Amp Peak @ T
A
= 25
°
C)
V
TM
1.7
Volts
Gate Trigger Current (Continuous dc) (Note 2.)
(V
AK
= 12 V, R
L
= 100 Ohms)
T
C
= 25
°
C
I
GT
40
200
μ
A
Holding Current (Note 2.)
(V
AK
= 12 V, I
GT
= 0.5 mA)
T
C
= 25
°
C
T
C
= –40
°
C
I
H
0.5
5.0
10
mA
Latch Current
(V
AK
= 12 V, I
GT
= 0.5 mA, R
GK
= 1.0 k)
T
C
= 25
°
C
T
C
= –40
°
C
I
L
0.6
10
15
mA
Gate Trigger Voltage (Continuous dc) (Note 2.)
(V
AK
= 12 V, R
L
= 100 Ohms, I
GT
= 10 mA)
T
C
= 25
°
C
T
C
= –40
°
C
V
GT
0.62
0.8
1.2
Volts
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, R
GK
= 1000 Ohms,
T
J
= 110
°
C)
dV/dt
20
35
V/
μ
s
Critical Rate of Rise of On–State Current
(I
PK
= 20 A; Pw = 10
μ
sec; diG/dt = 1.0 A/
μ
sec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width
1.0 ms, Duty Cycle
1%.
1. R
GK
= 1000 Ohms included in measurement.
2. Does not include R
GK
in measurement.
di/dt
50
A/
μ
s
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