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參數(shù)資料
| 型號： | NCR169DRLRM |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 晶閘管 |
| 英文描述： | General Purpose Sensitive Gate Silicon Controlled Rectifier |
| 中文描述： | 0.8 A, 400 V, SCR, TO-92 |
| 封裝： | PLASTIC, CASE 029-11, TO-226AA, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NCR169DRLRM |
Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 0
1
Publication Order Number:
NCR169D/D
NCR169D
Advance Information
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
On–State Current Rating of 0.8 Amperes RMS at 80
°
C
Surge Current Capability – 10 Amperes
Immunity to dV/dt – 20 V/
μ
sec Minimum at 110
°
C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (Note 1.)
(T
=
40 to 110
°
C, Sine Wave, 50 to
60 Hz; Gate Open)
V
DRM,
V
RRM
400
Volts
On-State RMS Current
(T
C
= 80
°
C) 180
°
Conduction Angles
I
T(RMS)
0.8
Amp
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
J
= 25
°
C)
I
TSM
10
Amps
Circuit Fusing Consideration (t = 10 ms)
I
2
t
0.415
A
2
s
Forward Peak Gate Power
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
P
GM
0.1
Watt
Forward Average Gate Power
(T
A
= 25
°
C, t = 20 ms)
P
G(AV)
0.10
Watt
Forward Peak Gate Current
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
I
GM
1.0
Amp
Reverse Peak Gate Voltage
(T
A
= 25
°
C, Pulse Width
1.0
μ
s)
V
GRM
5.0
Volts
Operating Junction Temperature Range
@ Rate V
RRM
and V
DRM
T
J
–40 to
110
°
C
Storage Temperature Range
T
stg
–40 to
150
°
C
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
SCR
0.8 AMPERES RMS
400 VOLTS
http://onsemi.com
TO–92
(TO–226AA)
CASE 029
STYLE 10
A
G
K
PIN ASSIGNMENT
1
2
3
Gate
Anode
Cathode
K
G
A
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
Y
WW = Work Week
= Year
NCR
169D
YWW
1 2 3
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