參數(shù)資料
型號(hào)： NCP1607BDR2G
廠商： ON Semiconductor
文件頁(yè)數(shù)： 3/23頁(yè)
文件大小： 255K
描述： IC PFC CONTROLLER CRM 8SOIC
標(biāo)準(zhǔn)包裝： 1
模式： 臨界傳導(dǎo)（CRM）
電流 - 啟動(dòng)： 23.5µA
電源電壓： 9.5 V ~ 20 V
工作溫度： -40°C ~ 125°C
安裝類型： 表面貼裝
封裝/外殼： 8-SOIC（0.154"，3.90mm 寬）
供應(yīng)商設(shè)備封裝： 8-SOICN
包裝： 標(biāo)準(zhǔn)包裝
其它名稱： NCP1607BDR2GOSDKR
NCP1607
http://onsemi.com
3
PIN FUNCTION DESCRIPTION
Pin
Name
Function
1
FB
The FB pin is the inverting input of the internal error amplifier. An external resistor divider scales the output voltage to the
internal reference voltage to maintain regulation. The feedback information is also used for the programmable overvoltage
and undervoltage protections. The controller is disabled when this pin is below the undervoltage protection threshold,
V
UVP
, typically 0.3 V.
2
Control
The Control pin is the output of the internal error amplifier. A compensation network is placed between the Control and FB
pins to set the loop bandwidth. A low enough bandwidth is needed to obtain a high power factor ratio and a low THD.
3
Ct
The Ct pin sources a current to charge an external timing capacitor. The circuit controls the power switch on time by com-
paring the Ct voltage to an internal voltage derived from the regulation block. The Ct pin discharges the external timing
capacitor at the end of the switching cycle.
4
CS
The CS pin limits the cyclebycycle current through the power switch. When the CS voltage exceeds the internal
threshold, the MOSFET driver turns off. The sense resistor that connects to the CS pin programs the maximum switch
current.
5
ZCD
The voltage of an auxiliary winding is applied to this pin to detect when the inductor is demagnetized for critical conduction
mode operation. The controller is disabled when this pin is grounded.
6
GND
Analog ground.
7
DRV
Integrated MOSFET driver capable of driving a high gate charge power MOSFET.
8
V
CC
The V
CC
 pin is the positive supply of the controller. The controller is enabled when V
CC
 exceeds V
CC(on)
 and remains
enabled until V
CC
 decreases below V
CC(off)
.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage
V
CC
0.3 to 20
V
Supply Current
I
CC
?0
mA
DRV Voltage
V
DRV
0.3 to 20
V
DRV Sink Current
I
DRV(sink)
800
mA
DRV Source Current
I
DRV(source)
500
mA
FB Voltage
V
FB
0.3 to 10
V
FB Current
I
FB
?0
mA
Control Voltage
V
CONTROL
0.3 to 10
V
Control Current
I
CONTROL
2 to 10
mA
Ct Voltage
V
Ct
0.3 to 6
V
Ct Current
I
Ct
?0
mA
CS Voltage
V
CS
0.3 to 6
V
CS Current
I
CS
?0
mA
ZCD Voltage
V
ZCD
0.3 to 10
V
ZCD Current
I
ZCD
?0
mA
Power Dissipation and Thermal Characteristics
D suffix, Plastic Package, Case 751
Maximum Power Dissipation @ T
A
 = 70癈
Thermal Resistance JunctiontoAir
P
D
(SO)
R
qJA
(SO)
450
178
mW
癈/W
Operating Junction Temperature Range
T
J
40 to 125
癈
Maximum Junction Temperature
T
J(MAX)
150
癈
Storage Temperature Range
T
STG
65 to 150
癈
Lead Temperature (Soldering, 10 s)
T
L
300
癈
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1.  This device series contains ESD protection and exceeds the following tests:
Pins 16, 8:   Human Body Model 2000 V per JEDEC Standard JESD22A114E,
 Machine Model Method 200 V per JEDEC Standard JESD22A115A
Pin 7:   Human Body Model 2000 V per JEDEC Standard JESD22A114E,
 Machine Model Method 180 V per JEDEC Standard JESD22A115A
2.  This device contains latchup protection and exceeds ?00 mA per JEDEC Standard JESD78.
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