參數(shù)資料
型號(hào): NBB-312
廠商: RF MICRO DEVICES INC
元件分類: 衰減器
英文描述: CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
中文描述: 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封裝: 3 X 3 MM, ROHS COMPLIANT, CERAMIC, MPGA-9
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 210K
代理商: NBB-312
4-28
NBB-312
Rev A3 030912
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Application Notes
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
Recommended Bias Resistor Values
Supply Voltage, V
CC
(V)
Bias Resistor, R
CC
(
)
8
10
100
12
140
15
200
20
300
60
C block
4
8
1,2,3
5,6,7,9
C block
Out
L choke
(optional)
R
CC
V
CC
V
D
= 5 V
V
DEVICE
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NBB-312_06 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
NBB-312_1 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
NBB-312-E 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
NBB-312-T1 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
NBB-312-T3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Amplifier. Other