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參數(shù)資料
| 型號： | NBB-312 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, CERAMIC, MPGA-9 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 210K |
| 代理商： | NBB-312 |
4-26
NBB-312
Rev A3 030912
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Exceeding any one or a combination of these limits may cause permanent damage.
Rating
+20
350
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
Small Signal Power Gain, S21
V
D
=+5V, I
CC
=50mA, Z
0
=50
, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 8.0GHz
f=8.0GHz to 12.0GHz
f=0.1GHz to 8.0GHz
f=0.1GHz to 7.0GHz
f=7.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=0.1GHz to 12.0GHz
BW3 (3dB)
12.5
12.0
11.4
9.0
12.9
12.9
11.7
9.7
+0.6
1.2:1
1.65:1
2.0:1
1.5:1
11.0
dB
dB
dB
dB
dB
Gain Flatness, GF
Input VSWR
Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
GHz
14.9
15.8
15.0
12.0
4.9
+24.0
-15.6
5.0
-0.0015
dBm
dBm
dBm
dBm
dB
dBm
dB
V
dB/°C
f=2.0GHz
f=6.0GHz
f=8.0GHz
f=12.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 12.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δ
G
T
/
δ
T
MTTF versus Temperature
@ I
CC
=50mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θ
JC
4.7
5.3
85
123
°C
°C
>1,000,000
hours
152
°C/W
J
-------–
T
V
D
I
CC
θ
JC
°
C Watt
(
)
=
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
相關PDF資料 |
PDF描述 |
|---|---|
| NBB-312-E | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-T1 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-400 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| NBB-400-D | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| NBB-400-E | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NBB-312_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-E | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-T1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Amplifier. Other |
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