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參數(shù)資料
| 型號(hào)： | NBB-312 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 3 MM, ROHS COMPLIANT, CERAMIC, MPGA-9 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 210K |
| 代理商： | NBB-312 |
4-25
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
InGaP/HBT
GaN HEMT
9
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Pin 1
Indicator
RF OUT
Ground
RF IN
Ground
1
9
6
5
7
8
4
3
2
NBB-312
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
Narrow and Broadband Commercial and
Military Radio Designs
Linear and Saturated Amplifiers
Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
The NBB-312 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50
gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-312 provides flexibility and stability. The
NBB-310 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either 1,000 or 3,000 piece-per-reel quantities. Connec-
torized evaluation board designs optimized for high fre-
quency are also available for characterization purposes.
Reliable, Low-Cost HBT Design
12.5dB Gain
High P1dB of +15.8dBm at 6GHz
Single Power Supply Operation
50
I/O Matched for High Frequency
Use
NBB-312
Cascadable Broadband GaAs MMIC Amplifier DC to
12GHz
NBB-312-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-312-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
0
Rev A3 030912
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
N6
2.39 min
2.59 max
Lid ID
1.70 min
1.91 max
2.94 min
3.28 max
Pin 1
Indicator
1.00 min
1.50 max
0.025 min
0.125 max
0.38 nom
Pin 1
Indicator
RF OUT
0.98 min
1.02 max
Ground
0.50 nom
0.50 nom
All Dimensions in Millimeters
0.37 min
0.63 max
RF IN
Ground
Package Style: MPGA, Bowtie, 3x3, Ceramic
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NBB-312-E | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-T1 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-400 | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| NBB-400-D | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
| NBB-400-E | CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NBB-312_06 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312_1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-E | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-T1 | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz |
| NBB-312-T3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Amplifier. Other |
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