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參數(shù)資料
| 型號： | NAND512W3M5BZB5F |
| 廠商： | 意法半導體 |
| 元件分類： | 存儲器模塊 |
| 英文描述： | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| 中文描述： | 同一封裝內(nèi)整合了256/512Mb/1Gb（x8/x16，1.8/3V，528字節(jié)頁）NAND閃存以及256/512Mb（x16/x32，1.8V的）LPSDRAM的MCP |
| 文件頁數(shù)： | 21/23頁 |
| 文件大?。?/td> | 181K |
| 代理商： | NAND512W3M5BZB5F |
NAND256-M, NAND512-M, NAND01G-M
Part Numbering
21/23
4
Part Numbering
Ordering Information Scheme
Devices are shipped from the factory with the Flash memory content bits, in valid blocks,
erased to ’1’. For further information on any aspect of this device, please contact your
nearest ST Sales Office.
Table 10.
Example:
NAND256
R
3
M
4
A
ZB
5
E
Device Type
NAND Flash Memory
NAND Flash Density
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = V
DDF
= 1.7V to 1.95V
W = V
DDF
= 2.5V to 3.6V
NAND Bus Width
3 = x8
4 = x16
Family Identifier
M = 528 Byte Page NAND Flash + LPSDRAM
Device Options
0 = 256, x16, 104MHz, SDR, BGA107
2 = 2 x 256, 2x16, 104MHz, SDR, BGA137 or
512, x32, 133MHz, SDR, BGA137
3 = 256, x16, 133MHz, DDR BGA149
4 = 256, x16, 104MHz, SDR, BGA149
5 = 512, x16, 133MHz, DDR, BGA149
Product Version
A
B
C
Package
ZB = TFBGA
ZC = LFBGA
Temperature range
5 = -30°c to 85°C
Option
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NAND512W4A0AN6E | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W4A0AZA6E | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 32MX16 12US 63VFBGA - Trays |
| NAND64GAH0HZA5F | 制造商:Micron Technology Inc 功能描述:NAND EMMC - Tape and Reel |
| NAND64GW3FGAZN6F | 制造商:Micron Technology Inc 功能描述:FULL CUSTOM MCP - Tape and Reel |
| NAND98R3M0CZBB5E | 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays |
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