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參數(shù)資料
| 型號： | MX29LV320MTMI-70R |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY |
| 中文描述： | 6400位單電壓3V時僅均勻部門閃存 |
| 文件頁數(shù)： | 63/70頁 |
| 文件大小： | 555K |
| 代理商： | MX29LV320MTMI-70R |
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63
P/N:PM1093
REV. 1.1, AUG. 11, 2005
MX29LV64xM H/L
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
13.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
VCC + 1.0V
Current
-100mA
+100mA
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
LATCH-UP CHARACTERISTICS
ERASE AND PROGRAMMING PERFORMANCE (1)
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, 3.0V VCC. Programming specifications
assume checkboard data pattern.
2. Maximum values are measured at VCC = 3.0 V, worst case temperature. Maximum values are valid up to and
including 100,000 program/erase cycles.
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the
write buffer.
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer
operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Tables 3 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
Parameter
Minimum Pattern Data Retention Time
Min
20
Unit
Years
DATA RETENTION
PARAMETER
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
2
sec
Excludes 00h
programming
Chip Erase Time
64
128
sec
prior to erasure
Note 6
Total Write Buffer Program Time (Note 4)
240
us
Excludes
Total Accelerated Effective Write Buffer
200
us
system level
Program Time (Note 4)
overhead
Chip Program Time
63
sec
Note 7
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| MX29LV320MTMI-90G | 64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY |
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| MX29LV320MTXC-70G | 64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY |
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| MX29LV400CBMC-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 70NS 44SOP |
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| MX29LV400CBMI-70G | 功能描述:IC FLASH PAR 3V 4MB 70NS 44SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標(biāo)準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
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