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參數(shù)資料
| 型號： | MX29LV320MTMI-70R |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY |
| 中文描述： | 6400位單電壓3V時僅均勻部門閃存 |
| 文件頁數(shù)： | 23/70頁 |
| 文件大?。?/td> | 555K |
| 代理商： | MX29LV320MTMI-70R |
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23
P/N:PM1093
REV. 1.1, AUG. 11, 2005
MX29LV64xM H/L
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device
to be entirely pre-programmed prior to executing the Au-
tomatic Set-up Sector Erase command and Automatic
Sector Erase command. Upon executing the Automatic
Sector Erase command, the device will automatically
program and verify the sector(s) memory for an all-zero
data pattern. The system is not required to provide any
control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when the data on Q7 is "1" and the data on Q6 stops
toggling for two consecutive read cycles, at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
When using the Automatic Sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector erase
is a six-bus cycle operation. There are two "unlock" write
cycles. These are followed by writing the set-up com-
mand 80H. Two more "unlock" write cycles are then fol-
lowed by the sector erase command 30H. The sector
address is latched on the falling edge of WE# or CE#,
whichever happens later , while the command (data) is
latched on the rising edge of WE# or CE#, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE# or
CE#, whichever happens later. Each successive sector
load cycle started by the falling edge of WE# or CE#,
whichever happens later must begin within 50us from
the rising edge of the preceding WE# or CE#, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
ERASE SUSPEND
This command only has meaning while the state ma-
chine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend com-
mand is issued during the sector erase operation, the
device requires a maximum 20us to suspend the sector
erase operation. However, When the Erase Suspend com-
mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready. At this time,
state machine only allows the command register to re-
spond to the Erase Resume, program data to, or read
data from any sector not selected for erasure.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend pro-
gram operation is complete, the system can once again
read array data within non-suspended blocks.
ERASE RESUME
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.
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| MX29LV320MTMI-90G | 64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY |
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| MX29LV320MTXC-70G | 64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MX29LV400BTC70 | 制造商:MX 功能描述:New |
| MX29LV400CBMC-55Q | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 55NS 44SOP |
| MX29LV400CBMC-70G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 70NS 44SOP |
| MX29LV400CBMC-90G | 制造商:Macronix International Co Ltd 功能描述:IC FLASH 4MBIT 90NS 44SOP |
| MX29LV400CBMI-70G | 功能描述:IC FLASH PAR 3V 4MB 70NS 44SOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MX29LV 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
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