參數(shù)資料
型號: MX29L1611MC-90
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PDSO44
封裝: 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁數(shù): 4/39頁
文件大小: 659K
代理商: MX29L1611MC-90
4
P/N:PM0511
REV. 2.4, NOV. 06, 2001
MX29L1611
Table1.PIN DESCRIPTIONS
SYMBOL
A0 - A19
TYPE
INPUT
NAME AND FUNCTION
ADDRESS INPUTS: for memory addresses. Addresses are internally
latched during a write cycle.
LOW-BYTE DATA BUS: Input data and commands during Command Interface
Register(CIR) write cycles. Outputs array,status and identifier data in the
appropriate read mode. Floated when the chip is de-selected or the outputs
are disabled.
HIGH-BYTE DATA BUS: Inputs data during x 16 Data-Write operations.
Outputs array, identifier data in the appropriate read mode; not used for status
register reads. Floated when the chip is de-selected or the outputs are
disabled
Selects between high-byte data INPUT/OUTPUT(BYTE = HIGH) and LSB
ADDRESS(BYTE = LOW)
CHIP ENABLE INPUTS: Activate the device's control logic, Input buffers,
decoders and sense amplifiers. With CE high, the device is deselected and
power consumption reduces to Standby level upon completion of any current
program or erase operations. CE must be low to
OUTPUT ENABLES: Gates the device's data through the output buffers
during a read cycle OE is active low.
WRITE ENABLE: Controls writes to the Command Interface Register(CIR).
WE is active low.
WRITE PROTECT: Top or Bottom sector can be protected by writing a non-
volatile protect-bit for each sector. When WP is high, all sectors can be
programmed or erased regardless of the state of the protect-bits.
BYTE ENABLE: BYTE Low places device in x8 mode. All data is then input
or output on Q0-7 and Q8-14 float. AddressQ15/A-1 selects between the high
and low byte. BYTE high places the device in x16 mode, and turns off the Q15/
A-1 input buffer. Address A0, then becomes the lowest order address.
DEVICE POWER SUPPLY(3.0V~3.6V for MX29L1611-75/10/12 ; 2.7V~3.6V
for MX29L1611-90)
GROUND
Q0 - Q7
INPUT/OUTPUT
Q8 - Q14
INPUT/OUTPUT
Q15/A -1
INPUT/OUTPUT
CE
INPUT
select the device.
OE
INPUT
WE
INPUT
WP
INPUT
BYTE
INPUT
VCC
GND
相關(guān)PDF資料
PDF描述
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611GPC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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MX29L1611GPC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611MC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
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