參數(shù)資料
型號(hào): MX29L1611MC-90
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類(lèi): DRAM
英文描述: 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PDSO44
封裝: 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁(yè)數(shù): 14/39頁(yè)
文件大?。?/td> 659K
代理商: MX29L1611MC-90
14
P/N:PM0511
REV. 2.4, NOV. 06, 2001
MX29L1611
DATA PROTECTION
The MX29L1611 is designed to offer protection against
accidental erasure or programming caused by spurious
system level signals that may exist during power
transitions. During power up the device automatically
resets the internal state machine in the Read Array
mode. Also, with ts control register architecture, alteration
of the memory contents only occurs after successful
completion of specific multi-bus cycle command
sequences.
The device also incorporates several features to prevent
inadvertent write cycles resulting from VCC power-up
and power-down transitions or system noise.
LOW VCC WRITE INHIBIT
To avoid initiation of a write cycle during VCC power-up
and power-down, a write cycle is locked out for VCC less
than VLKO(typically 1.8V). If VCC < VLKO, the command
register is disabled and all internal program/erase circuits
are disabled. Under this condition the device will reset
to the read mode. Subsequent writes will be ignored until
the VCC level is greater than VLKO. It is the user's
responsibility to ensure that the control pins are logically
correct to prevent unintentional write when VCC is
above VLKO.
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 10ns (typical) on CE or WE will
not initiate a write cycle.
LOGICAL INHIBIT
Writing is inhibited by holding any one of OE = VIL,CE =
VIH or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
相關(guān)PDF資料
PDF描述
MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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MX29L1611GPC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
MX29L1611MC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
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