參數(shù)資料
型號(hào): MX29L1611MC-90
廠商: MACRONIX INTERNATIONAL CO LTD
元件分類: DRAM
英文描述: 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
中文描述: 1M X 16 FLASH 3V PROM, 90 ns, PDSO44
封裝: 0.500 INCH, PLASTIC, MO-175, SOP-44
文件頁(yè)數(shù): 20/39頁(yè)
文件大小: 659K
代理商: MX29L1611MC-90
20
P/N:PM0511
REV. 2.4, NOV. 06, 2001
MX29L1611
5.1 DC CHARACTERISTICS Vcc = 3.0V ~ 3.6V
SYMBOL
PARAMETER
NOTES
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
IIL
Input Load
1
±
1
uA
VCC = VCC Max
Current
VIN = VCC or GND
ILO
Output Leakage
1
±
10
uA
VCC = VCC Max
Current
VIN = VCC or GND
ISB1
VCC Standby
1
20
50
uA
VCC = VCC Max
Current(CMOS)
CE = VCC
±
0.2V
ISB2
VCC Standby
1
2
mA
VCC = VCC Max
Current(TTL)
CE = VIH
ICC1
VCC Read
1
50
80
mA
VCC = VCC Max
Current
f = 10MHz, IOUT = 0 mA
ICC2
VCC Erase
1,2
5
mA
CE = VIH
Suspend Current
Sector Erase Suspended
ICC3
VCC Program
1
15
30
mA
Program in Progress
Current
ICC4
VCC Erase Current
1
15
30
mA
Erase in Progress
VIL
Input Low Voltage
3
-0.3
0.6
V
VIH
Input High Voltage
4
0.7xVCC
VCC+0.3
V
VOL
Output Low Voltage
0.45
V
IOL = 2.1mA, Vcc = Vcc Min
VOH
Output High Voltage
2.4
V
IOH = -100uA, Vcc = Vcc Min
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3V, T = 25
°
C. These currents are valid for all product
versions (package and speeds).
2. ICC2 is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICC2 and ICC1.
3. VIL min. = -1.0V for pulse width < 50ns.
VIL min. = -2.0V for pulse width < 20ns.
4. VIH max. = VCC + 1.5V for pulse width < 20ns. If VIH is over the specified maximum value, read operation cannot be
guaranteed.
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MX29L1611PC-90 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM
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MX29L1611MC-10 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
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