參數(shù)資料
型號(hào): MW6S010MR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類(lèi): 功率晶體管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: PLASTIC, CASE 1265-08, 2 PIN
文件頁(yè)數(shù): 17/20頁(yè)
文件大?。?/td> 657K
代理商: MW6S010MR1
AR
C
HIVE
INF
O
RMA
TI
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N
ARCHIVE
INFORMA
TION
6
RF Device Data
Freescale Semiconductor
MW6S010MR1 MW6S010GMR1
TYPICAL CHARACTERISTICS — 900 MHz
ACPR
(dBc)
060
Pout, OUTPUT POWER (WATTS) AVG.
50
10
40
20
30
20
40
10
50
0.1
1
10
Gps
ACPR
VDD = 28 Vdc
IDQ = 125 mA
f = 945 MHz
Figure 8. Single-Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
100
15
20
0.1
0
50
TC = 30_C
25
_C
30
_C
10
1
19
18
17
16
40
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
G
ps
,POWER
GAIN
(dB)
Gps
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
16 V
IDQ = 125 mA
f = 945 MHz
VDD = 12 V
14
15
19
012
17
16
18
46
8
G
ps
,POWER
GAIN
(dB)
0
24
500
25
5
S21
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
S11
20
0
16
5
12
10
815
4
20
1200
1100
1000
900
800
700
600
VDD = 28 Vdc
Pout = 10 W CW
IDQ = 125 mA
S1
1(dB)
S21
(dB)
85
_C
25
_C
85
_C
16
10
2
20 V
VDD = 28 Vdc
IDQ = 125 mA
f = 945 MHz
24 V
28 V
32 V
ηD
η
D
,DRAIN
EFFICIENCY
(%),
G
ps
,POWER
GAIN
(dB)
ηD
η
D,
DRAIN
EFFICIENCY
(%)
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