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參數(shù)資料
| 型號： | MW6S010MR1 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| 封裝： | PLASTIC, CASE 1265-08, 2 PIN |
| 文件頁數(shù)： | 11/20頁 |
| 文件大小： | 657K |
| 代理商： | MW6S010MR1 |
MW6S010MR1 MW6S010GMR1
19
RF Device Data
Freescale Semiconductor
TO-270-2 GULL
PLASTIC
CASE 1265A-02
ISSUE B
BOTTOM VIEW
2X
E
D1
E4
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
C
A
M
aaa
C
2X
b1
2X
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
“D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
“D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSIONS
“D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS
“D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE D.
c1
E2
2X
A
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
.078
.082
1.98
2.08
INCHES
A1
.001
.004
0.02
0.10
A2
.077
.088
1.96
2.24
D
.416
.424
10.57
10.77
D1
.378
.382
9.60
9.70
D2
.290
.320
7.37
8.13
D3
.016
.024
0.41
0.61
E
.316
.324
8.03
8.23
E1
.238
.242
6.04
6.15
E2
.066
.074
1.68
1.88
E3
.150
.180
3.81
4.57
E4
.058
.066
1.47
1.68
L1
b1
.193
.199
4.90
5.06
c1
.007
.011
0.18
0.28
aaa
.01 BSC
.004
0.25 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
e
2
8
2
8
L
.018
.024
4.90
5.06
°°
DETAIL Y
SEATING
PLANE
B
M
bbb
C
L1
L
A1
GAGE
PLANE
e
DETAIL Y
E5
E5
.231
.235
5.87
5.97
MW6S010GMR1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW6S010NR1 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 10W TO270-2N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6S010NR1_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MW6S-12A | 制造商:TE Connectivity 功能描述:MW6S-12A = MW 6GHZ SENSITIVE H |
| MW6S-12P | 制造商:TE Connectivity 功能描述:MW6S-12P = MW 6GHZ SENSITIVE H |
| MW6S-5P | 制造商:TE Connectivity 功能描述:Military/Aerospace High Performance Relays 制造商:TE Connectivity 功能描述:MW6S-5P = MW 6GHZ SENSITIVE HI |
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