參數(shù)資料
型號(hào): MW6S010MR1
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: RF Power Field Effect Transistor
中文描述: RF功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 15/16頁(yè)
文件大?。?/td> 542K
代理商: MW6S010MR1
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
15
RF Device Data
Freescale Semiconductor
TO-270-2 GULL
PLASTIC
MW6S010GNR1(GMR1)
CASE 1265A-02
ISSUE A
BOTTOM VIEW
2X
E4
E
D1
E1
D2
E3
A2
EXPOSED
HEATSINK AREA
A
B
D
H
PIN ONE ID
D
A
M
aaa
C
A
M
aaa
C
2X
b1
2X
D3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS
D1" AND
E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS
D1" AND
E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE H.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS A AND B TO BE DETERMINED AT
DATUM PLANE H.
7. DIMENSIONS
D" AND
E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS
D" AND
E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER
MINED AT DATUM PLANE D.
c1
E2
E5
A
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
MIN
.078
.001
.077
.416
.378
.290
.016
.316
.238
.066
.150
.058
.231
MAX
.082
.004
.088
.424
.382
.320
.024
.324
.242
.074
.180
.066
.235
MIN
1.98
0.02
1.96
10.57
9.60
7.37
0.41
8.03
6.04
1.68
3.81
1.47
5.87
MAX
2.08
0.10
2.24
10.77
9.70
8.13
0.61
8.23
6.15
1.88
4.57
1.68
5.97
MILLIMETERS
INCHES
L1
b1
c1
e
.193
.007
2
.199
.011
8
4.90
0.18
2
5.06
0.28
8
aaa
.01 BSC
.004
0.25 BSC
0.10
PIN 1
PIN 2
PIN 3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
L
.018
.024
4.90
5.06
°
°
°
°
DETAIL Y
SEATING
PLANE
B
M
bbb
C
L1
L
A1
PLANE
e
DETAIL Y
E5
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