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參數(shù)資料
| 型號： | MW7IC2240GNR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/24頁 |
| 文件大小： | 825K |
| 代理商： | MW7IC2240GNR1 |
MW7IC2240NR1 MW7IC2240GNR1 MW7IC2240NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2240N wideband integrated circuit is designed with on-chip
matching that makes it usable from 2000 to 2200 MHz. This multi-stage
structure is rated for 24 to 32
Volt operation and covers all typical cellular base
station modulation formats including TD-SCDMA.
Typical Performance
Typical Single-Carrier W-CDMA Performance: V
DD
= 28 Volts,
I
DQ1
= 90 mA, I
DQ2
= 420 mA, P
out
= 4 Watts Avg., Full Frequency Band
(2110-2170 MHz), Channel Bandwidth = 3.84 MHz. PAR = 7.5 dB @
0.01% Probability on CCDF.
Power Gain — 30 dB
Power Added Efficiency — 14%
ACPR @ 5 MHz Offset —
-
50 dBc in 3.84 MHz Bandwidth
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 40
Watts CW
Output Power
P
out
@ 1 dB Compression Point = 40 Watts CW
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 Watts
CW P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
On-Chip Matching (50
Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/
Disable Function
(1)
Integrated ESD Protection
225
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Figure 1. Functional Block Diagram
Quiescent Current
Temperature Compensation
(1)
V
DS1
RF
in
V
GS1
V
GS2
V
DS1
RF
out
/V
DS2
(Top View)
GND
V
DS1
NC
NC
NC
RF
in
V
GS1
V
GS2
V
DS1
GND
GND
NC
RF
out
/V
DS2
GND
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
1
NC
NC
Figure 2. Pin Connections
Note: Exposed backside of the package is
the source terminal for the transistors.
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
Document Number: MW7IC2240N
Rev. 0, 11/2007
Freescale Semiconductor
Technical Data
MW7IC2240NR1
MW7IC2240GNR1
MW7IC2240NBR1
2110-2170 MHz, 4 W Avg., 28 V
SINGLE W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-01
TO-270 WB-16
PLASTIC
MW7IC2240NR1
CASE 1887-01
TO-270 WB-16 GULL
PLASTIC
MW7IC2240GNR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW7IC2240NBR1
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW7IC2240NBR1 | 功能描述:射頻放大器 2170MHZ 4W TO272WB16 RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW7IC2240NR1 | 功能描述:射頻放大器 2170MHZ 4W TO270WB16 RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW7IC2425GNR1 | 功能描述:射頻MOSFET電源晶體管 HV7 2400MHZ 4W TO270WB16G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW7IC2425NBR1 | 功能描述:射頻MOSFET電源晶體管 HV7 2400MHZ 4W TO270WB16G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW7IC2425NR1 | 功能描述:射頻MOSFET電源晶體管 HV7 2400MHZ 4W TO270WB16G RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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