參數(shù)資料
型號： MW7IC18100GNR1
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： RF LDMOS Wideband Integrated Power Amplifiers
中文描述： 射頻LDMOS寬帶集成功率放大器
文件頁數(shù)： 1/32頁
文件大?。?/td> 938K
代理商： MW7IC18100GNR1
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC18100N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1805 to 2050 MHz. This multi-stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulations including GSM EDGE and CDMA.
Final
Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ1
= 180 mA, I
DQ2
= 1000 mA,
P
out
= 100 Watts CW, 1805-1880 MHz or 1930-1990 MHz
Power Gain — 30 dB
Power Added Efficiency — 48%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 215 mA, I
DQ2
=
800 mA, P
out
= 40 Watts Avg., 1805-1880 MHz or 1930-1990 MHz
Power Gain — 31 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = -63 dBc
Spectral Regrowth @ 600 kHz Offset = -80 dBc
EVM — 1.5% rms
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 1 mW to 120 W CW
P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
Integrated ESD Protection
200
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
Quiescent Current
Temperature Compensation
(1)
V
DS1
RF
in
V
GS1
V
GS2
RF
out
/V
DS2
NC
NC
NC
RF
in
RF
in
V
GS1
V
GS2
V
DS1
NC
RF
out
/V
DS2
1
2
3
4
5
7
8
9
10
11
12
14
V
DS1
NC
NC
RF
out
/V
DS2
13
6
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family
. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
Document Number: MW7IC18100N
Rev. 1, 6/2007
Freescale Semiconductor
Technical Data
MW7IC18100NR1
MW7IC18100GNR1
MW7IC18100NBR1
1990 MHz, 100 W, 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618-01
TO-270 WB-14
PLASTIC
MW7IC18100NR1
CASE 1621-01
TO-270 WB-14 GULL
PLASTIC
MW7IC18100GNR1
CASE 1617-01
TO-272 WB-14
PLASTIC
MW7IC18100NBR1
Freescale Semiconductor, Inc., 2007. All rights reserved.
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相關代理商/技術參數(shù)
參數(shù)描述
MW7IC18100NBR1 功能描述:射頻放大器 HV7 1990MHZ RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MW7IC18100NR1 功能描述:射頻放大器 HV7 1990MHZ RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MW7IC2020N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated
MW7IC2020NT1 功能描述:射頻放大器 HV7IC 2GHz 20W PQFN8X8 RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MW7IC2020NT1-CUT TAPE 制造商:Freescale 功能描述:MW7IC2020NT1 Series 32 V 2.17 GHz RF LDMOS Wideband Integrated Power Amplifier
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