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參數(shù)資料
| 型號： | MW6IC2015GNBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 27/28頁 |
| 文件大?。?/td> | 1132K |
| 代理商： | MW6IC2015GNBR1 |
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MW6IC2015NBR1 MW6IC2015GNBR1
27
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Feb. 2007
Added “and TD-SCDMA” to data sheet description paragraph, p. 1.
Updated verbiage on Typical Performances table, p. 2
Corrected V
BIAS
and V
SUPPLY
callouts, Figs. 3 and 21, Test Circuit Schematic, p. 4, 11, Figs. 4 and 22, Test
Circuit Component Layout, p. 5, 12
Updated Part Numbers in Tables 6 and 7, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 11
Adjusted scale for Figs. 7 and 25, Two-Tone Power Gain versus Output Power, Figs. 8 and 26,
Intermodulation Distortion Products versus Output Power, Figs. 11 and 29, 2-Carrier W-CDMA ACPR,
IM3, Power Gain and Power Added Efficiency versus Output Power, Figs. 12 and 30, Power Gain and
Power Added Efficiency versus CW Output Power, Figs. 16 and 34, EVM and Power Added Efficiency
versus Output Power, Figs. 17 and 35, Spectral Regrowth at 400 and 600 kHz versus Output Power, to
better match the device’s capabilities, p. 6-8, 13-15
Replaced Figure 18, MTTF versus Junction Temperature with updated graph. Removed Amps
2
and listed
operating characteristics and location of MTTF calculator for device, p. 9
Corrected Series Impedance data table test conditions, Figs. 20 and 36, p. 10, 16
Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 17-20.
Added Product Documentation and Revision History, p. 27
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW6IC2015MBR1 | 功能描述:IC PWR AMP RF 26V 15W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW6IC2015NBR1 | 功能描述:射頻放大器 1805-1990MHZ RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW6IC2015NBR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW6IC2240GNBR1 | 功能描述:射頻放大器 2110-2170MHZ RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW6IC2240N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
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