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參數(shù)資料
| 型號： | MW6IC2240GNBR1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 490K |
| 代理商： | MW6IC2240GNBR1 |
MW6IC2240NBR1 MW6IC2240GNBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on-chip
matching that makes it usable from 2110 to 2170 MHz. This multi-stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
Typical 2-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
210 mA, I
DQ2
= 370 mA, P
out
= 4.5 Watts Avg., Full Frequency Band
(2110-2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB
@ 0.01% Probability on CCDF.
Power Gain — 28 dB
Power Added Efficiency — 15%
IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth
Driver Application
Typical 2-Carrier W-CDMA Performance: V
DD
= 28 Volts, I
DQ1
=
300 mA, I
DQ2
= 320 mA, P
out
= 25 dBm, Full Frequency Band (2110-
2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 29 dB
IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
P
out
.
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
Integrated ESD Protection
200
°
C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2240N
Rev. 1, 1/2006
Freescale Semiconductor
Technical Data
2110-2170 MHz, 4.5 W AVG., 28 V
2 x W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
MW6IC2240NBR1
MW6IC2240GNBR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW6IC2240NBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW6IC2240GNBR1
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
(Top View)
GND
V
DS1
NC
NC
RF
in
V
GS1
V
GS2
V
GND
NC
RF
out
/
V
DS2
GND
1
2
3
4
5
6
7
8
9
16
15
14
13
12
10
11
GND
Quiescent Current
Temperature Compensation
V
DS1
RF
in
V
GS1
V
GS2
V
DS1
RF
out
/V
DS2
NC
NC
Note:
Exposed backside flag is source
terminal for transistors.
Freescale Semiconductor, Inc., 2006. All rights reserved.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MW6IC2240N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW6IC2240NBR1 | 功能描述:射頻放大器 2110-2170MHZ RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW6IC2420NBR1 | 功能描述:射頻MOSFET電源晶體管 2.4GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MW6IC2420NBR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Integrated Power Amplifier |
| MW6S004NT1 | 功能描述:射頻MOSFET電源晶體管 HV6 1950MHZ 2W PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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