參數(shù)資料
型號: MW6IC2015GNBR1
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifiers
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 2/28頁
文件大小: 1132K
代理商: MW6IC2015GNBR1
2
RF Device Data
Freescale Semiconductor
MW6IC2015NBR1 MW6IC2015GNBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +6
Vdc
Storage Temperature Range
T
stg
-65 to +200
°
C
Operating Junction Temperature
T
J
200
°
C
Input Power
P
in
20
dBm
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1)
Unit
Thermal Resistance, Junction to Case
Final Application
(P
out
= 15 W CW)
Stage 1, 26 Vdc, I
DQ1
= 100 mA
Stage 2, 26 Vdc, I
DQ2
= 170 mA
Driver Application
(P
out
= 3 W CW)
Stage 1, 26 Vdc, I
DQ1
= 130 mA
Stage 2, 26 Vdc, I
DQ2
= 170 mA
R
θ
JC
4.3
1.2
4.3
1.3
°
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale 1930-1990 MHz Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA, P
out
= 15 W
PEP, f1 = 1930 MHz, f2 = 1930.1 MHz and f1 = 1990 MHz, f2 = 1990.1 MHz, Two-Tone CW
Power Gain
G
ps
24
26
dB
Power Added Efficiency
PAE
26
28
%
Intermodulation Distortion
IMD
-30
-27
dBc
Input Return Loss
IRL
-10
dB
Typical Two-Tone Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 100 mA, I
DQ2
= 170 mA, P
out
=
15 W PEP, 1805-1880 MHz, Two-Tone CW, 100 kHz Tone Spacing
Power Gain
G
ps
26
dB
Power Added Efficiency
PAE
28
%
Intermodulation Distortion
IMD
-30
dBc
Input Return Loss
IRL
-10
dB
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
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