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參數(shù)資料
| 型號(hào)： | MUN5335DW1T1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | Dual Bias Resistor Transistors |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大?。?/td> | 308K |
| 代理商： | MUN5335DW1T1 |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT–363 package which is ideal for low power surface mount applications
where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
VCEO
IC
50
Vdc
Collector-Emitter Voltage
50
Vdc
Collector Current
THERMAL CHARACTERISTICS
100
mAdc
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θ
JA
TJ, Tstg
PD
833
°
C/W
°
C
mW
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25
°
C(1)
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
–65 to +150
*
150
Device
Marking
R1 (K)
R2 (K)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1(2)
MUN5316DW1T1(2)
MUN5330DW1T1(2)
MUN5331DW1T1(2)
MUN5332DW1T1(2)
MUN5333DW1T1(2)
MUN5334DW1T1(2)
MUN5335DW1T1(2)
11
12
13
14
15
16
30
31
32
33
34
35
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MUN5311DW1T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 419B–01, STYLE 1
SOT–363
Q1
R1
R2
R2
R1
Q2
(1)
(2)
(3)
(4)
(5)
(6)
12
3
65
4
REV 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5335DW1T1G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA Complementary 50V NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5335DW1T2 | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA Complementary RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5335DW1T2G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA Complementary 50V NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN53XXDW1T1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Dual Bias Resistor Transistors |
| MUP-110-1 | 制造商:Novotechnik 功能描述: |
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