參數(shù)資料
型號： MURD620CTT4
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： SWITCHMODE Power Rectifier
中文描述： 3 A, 200 V, SILICON, RECTIFIER DIODE
封裝： PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù)： 1/4頁
文件大小： 87K
代理商： MURD620CTT4
1
Rectifier Device Data
DPAK Surface Mount Package
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
Ultrafast 35 Nanosecond Recovery Time
Low Forward Voltage Drop
Low Leakage
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering
Purposes: 260
°
C Max. for 10 Seconds
Shipped 75 units per plastic tube
Available in 16 mm Tape and Reel, 2500 units per reel, by
adding a “T4’’ suffix to the part number
Marking: U620T
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
Volts
Average Rectified Forward Voltage
(TC = 140
°
C, Rated VR)
Per Diode
Per Device
IF(AV)
3
6
Amps
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 145
°
C)
Per Diode
IF
6
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, 60 Hz)
IFSM
50
Amps
Operating Junction and Storage Temperature
TJ, Tstg
–65 to +175
°
C
THERMAL CHARACTERISTICS PER DIODE
Thermal Resistance, Junction to Case
Junction to Ambient (1)
R
θ
JC
R
θ
JA
9
80
°
C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage Drop (2)
(iF = 3 Amps, TC = 25
°
C)
(iF = 3 Amps, TC = 125
°
C)
(iF = 6 Amps, TC = 25
°
C)
(iF = 6 Amps, TC = 125
°
C)
vF
1
0.96
1.2
1.13
Volts
Maximum Instantaneous Reverse Current (2)
(TJ = 25
°
C, Rated dc Voltage)
(TJ = 125
°
C, Rated dc Voltage)
iR
5
250
μ
A
Maximum Reverse Recovery Time
(IF = 1 Amp, di/dt = 50 Amps/
μ
s, VR = 30 V, TJ = 25
°
C)
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25
°
C)
(1) Rating applies when surface mounted on the minimum pad sizes recommended.
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
trr
35
25
ns
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MURD620CT/D
SEMICONDUCTOR TECHNICAL DATA
1
3
4
ULTRAFAST RECTIFIERS
6 AMPERES
200 VOLTS
CASE 369A–13
PLASTIC
MURD620CT is a
Motorola Preferred Device
1
3
4
Rev 1
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相關代理商/技術參數(shù)
參數(shù)描述
MURD620CTT4G 功能描述:整流器 200V 6A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURD620CTT4G-CUT TAPE 制造商:ON 功能描述:MURD Series 6 A 200 V 35 ns Tab Mount SWITCHMODE?Power Rectifier - TO-252
MURD620CTTR 功能描述:整流器 200 Volt 6.0 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURD620CTTRL 功能描述:整流器 200 Volt 6.0 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
MURD620CTTRLPBF 功能描述:整流器 200 Volt 6.0 Amp Common Cathode RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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