- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379328 > MURD620CT (ON SEMICONDUCTOR) SWITCHMODE Power Rectifier PDF資料下載
參數(shù)資料
| 型號： | MURD620CT |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SWITCHMODE Power Rectifier |
| 中文描述： | 3 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 87K |
| 代理商： | MURD620CT |
1
Rectifier Device Data
DPAK Surface Mount Package
. . . designed for use in switching power supplies, inverters and as
free wheeling diodes, these state–of–the–art devices have the
following features:
Ultrafast 35 Nanosecond Recovery Time
Low Forward Voltage Drop
Low Leakage
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering
Purposes: 260
°
C Max. for 10 Seconds
Shipped 75 units per plastic tube
Available in 16 mm Tape and Reel, 2500 units per reel, by
adding a “T4’’ suffix to the part number
Marking: U620T
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
Volts
Average Rectified Forward Voltage
(TC = 140
°
C, Rated VR)
Per Diode
Per Device
IF(AV)
3
6
Amps
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 145
°
C)
Per Diode
IF
6
Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, 60 Hz)
IFSM
50
Amps
Operating Junction and Storage Temperature
TJ, Tstg
–65 to +175
°
C
THERMAL CHARACTERISTICS PER DIODE
Thermal Resistance, Junction to Case
Junction to Ambient (1)
R
θ
JC
R
θ
JA
9
80
°
C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage Drop (2)
(iF = 3 Amps, TC = 25
°
C)
(iF = 3 Amps, TC = 125
°
C)
(iF = 6 Amps, TC = 25
°
C)
(iF = 6 Amps, TC = 125
°
C)
vF
1
0.96
1.2
1.13
Volts
Maximum Instantaneous Reverse Current (2)
(TJ = 25
°
C, Rated dc Voltage)
(TJ = 125
°
C, Rated dc Voltage)
iR
5
250
μ
A
Maximum Reverse Recovery Time
(IF = 1 Amp, di/dt = 50 Amps/
μ
s, VR = 30 V, TJ = 25
°
C)
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25
°
C)
(1) Rating applies when surface mounted on the minimum pad sizes recommended.
(2) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
trr
35
25
ns
SWITCHMODE is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MURD620CT/D
SEMICONDUCTOR TECHNICAL DATA
1
3
4
ULTRAFAST RECTIFIERS
6 AMPERES
200 VOLTS
CASE 369A–13
PLASTIC
MURD620CT is a
Motorola Preferred Device
1
3
4
Rev 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MURD620CTG | SWITCHMODE Power Rectifier |
| MURD620CTT4 | SWITCHMODE Power Rectifier |
| MURD620CTT4G | SWITCHMODE Power Rectifier |
| MURD620CTTRR | SEE A3938SLD-T |
| MURD620CT | Ultrafast Rectifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURD620CT/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SWITCHMODE? Power Rectifier |
| MURD620CT_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:ULTRAFAST RECTIFIER 6.0 AMPERES 200 VOLTS |
| MURD620CT_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier |
| MURD620CT1 | 功能描述:整流器 200V 6A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURD620CT1G | 制造商:ON Semiconductor 功能描述:Diode Switching 200V 6A 3-Pin(3+Tab) IPAK Rail |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。