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參數(shù)資料
| 型號(hào)： | MUN5215DW |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Dual Bias Resistor Transistors |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 230K |
| 代理商： | MUN5215DW |
9
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
mm
inches
0.035
0.9
0.075
1.9
0.7
0.028
0.65
0.025
0.65
0.025
SC-70/SOT-323 POWER DISSIPATION
The power dissipation of the SC-70/SOT-323 is a function
of the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction tempera-
ture of the die, R
θ
JA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet, PD can be
calculated as follows.
PD =
TJ(max) – TA
R
θ
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
°
C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =150
°
C – 25
°
C
833
°
C/W
= 150 milliwatts
The 833
°
C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 150 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad
. Using a board material such as
Thermal Clad, a power dissipation of 300 milliwatts can be
achieved using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10
°
C.
The soldering temperature and time should not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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參數(shù)描述 |
|---|---|
| MUN5215DW1T1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5215DW1T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 SS BR XSTR NPN 50V RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5215T1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5215T1G | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5216 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor |
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