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參數資料
| 型號： | MUN2211T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318D-04, SC-59, 3 PIN |
| 文件頁數： | 13/18頁 |
| 文件大小： | 160K |
| 代理商： | MUN2211T3 |
MUN2211T1 Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 5) (Continued)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN2211T1, G
MUN2212T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MUN2213T1, G
MUN2240T1, G
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
MUN2236T1, G
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
MUN2237T1, G
(VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW)
MUN2241T1, G
VOL
-
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2233T1, G
MUN2234T1, G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN2230T1, G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN2215T1, G
MUN2216T1, G
MUN2231T1, G
MUN2232T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
VOH
4.9
-
Vdc
Input Resistor
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
R1
7.0
15.4
32.9
7.0
3.3
0.7
1.5
3.3
15.4
70
32.9
70
10
22
47
10
4.7
1.0
2.2
4.7
22
100
47
100
13
28.6
61.1
13
6.1
1.3
2.9
6.1
28.6
130
61.1
130
k
W
Resistor Ratio
MUN2211T1, G
MUN2212T1, G
MUN2213T1, G
MUN2214T1, G
MUN2215T1, G
MUN2216T1, G
MUN2230T1, G
MUN2231T1, G
MUN2232T1, G
MUN2233T1, G
MUN2234T1, G
MUN2236T1, G
MUN2237T1, G
MUN2240T1, G
MUN2241T1, G
R1/R2
0.8
0.17
-
0.8
0.055
0.38
0.8
1.7
-
1.0
0.21
-
1.0
0.12
0.47
1.0
2.15
-
1.2
0.25
-
1.2
0.185
0.56
1.2
2.6
-
5. Pulse Test: Pulse Width < 300
ms, Duty Cycle < 2.0%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN2211T3G | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN2212 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor |
| MUN2212RT1 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Bias Resistor Transistor |
| MUN2212T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN2212T1G | 功能描述:開關晶體管 - 偏壓電阻器 SS BR XSTR NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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