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參數(shù)資料
| 型號(hào)： | MUBW4-12A6 |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | 3.6 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-25 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 242K |
| 代理商： | MUBW4-12A6 |
2000 IXYS All rights reserved
2 - 8
Inductive load, T
VJ = 125°C
V
CC = 600 V; IC = 1.5 A
R
G = 100 W; VGE =
±15 V
V
GE = 0 V
V
CE = 25 V
f = 1 MHz
MUBW 4-12 A6
Output Inverter T1 - T6, D1 - D6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ = 25°C
1200
V
V
CGR
T
VJ = 25°C; RGE = 20k
W
1200
V
V
GE
T
VJ = 25°C
±20
V
I
C
T
C =
25°C
3.6
A
T
C =
90°C
2.4
A
I
CM
t
p = 1 ms = 1% duty cycle;
T
C = 25°C
7.2
A
T
C = 110°C
4.8
A
t
SC
V
CE = 600 V; TVJ = 125°C
non-repetitive
10
s
P
tot
T
C = 25°C
45
W
T
VJ
Free-Wheeling Diode
+150
°C
T
VJ
IGBT
+150
°C
Symbol
Conditions
Characteristic Values
(T
VJ = 25°C, unless otherwise specified)
min.
typ.
max.
I
CES
V
GE = 0 V; VCE = 1000 V
1
25
A
I
GES
V
CE = 0 V; VGE = 25 V
0.1
100
nA
V
GE(th)
V
GE = VCE; IC = 0.1 mA
4.5
5.5
6.5
V
V
(BR)CES
V
GE = 0 V; IC = 10 mA; TVJ = -40°C
1200
V
V
CEsat
V
GE = 15 V; IC = 1.5 A;
T
VJ =
25°C
2.8
3.3
V
T
VJ = 150°C
4
4.5
V
t
f
100
ns
t
r
58
ns
t
d(on)
80
ns
t
d(off)
290
ns
E
off
0.12
mJ
E
on
0.34
mJ
C
iss
225
pF
C
oss
25
pF
C
rss
13
pF
g
fs
V
CE = 20 V; IC = 1.5 A
0.6
S
Q
g
V
CC = 800 V; IC = 1 A pulse; VGE = 15 V
24.1
nC
V
F
I
F = 4 A; VGE = 0 V;
T
VJ =
25°C
2.3
3
V
T
VJ = 100°C
2
V
t
rr
I
F = 4 A; VGE = 0 V; TVJ = 100°C
55
ns
V
R = -300 V; diF/dt = -800 A/s
Q
r
I
F = 4 A; VGE = 0 V; TVJ = 100°C
0.8
C
V
R = -300 V; diF/dt = -800 A/s
I
r
250
A
R
thJC
IGBT
(per die)
2.3
°C/W
Diode
(per die)
2.25
°C/W
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