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| 型號： | MTY100N10E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | CASE 340G-02, TO-264, 3 PIN |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 207K |
| 代理商： | MTY100N10E |
MTY100N10E
http://onsemi.com
6
SAFE OPERATING AREA
1
0.1
0.01
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
t, TIME (s)
D = 0.5
0.2
r
(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.1
0.05
0.02
0.01
250
200
0
25
50
75
100
125
150
1000
100
10
1
0.1
1
10
100
μs
10
μs
1 ms
10 ms
dc
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Figure 13. Thermal Response
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
VGS = 20 V
SINGLE PULSE
TC = 25°C
ID = 100 A
SINGLE PULSE
150
100
50
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
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相關代理商/技術參數(shù) |
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