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| 型號： | MTY100N10E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | CASE 340G-02, TO-264, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 207K |
| 代理商： | MTY100N10E |
MTY100N10E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 250 μA)
Temperature Coefficient (Positive)
V(BR)DSS
100
115
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
200
μAdc
GateBody Leakage Current (VGS = ±20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
7
4
Vdc
mV/°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 50 Adc)
RDS(on)
0.011
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 100 Adc)
(ID = 50 Adc, TJ = 125°C)
VDS(on)
1.0
1.2
1.0
Vdc
Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc)
gFS
30
49
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
Ciss
7600
10640
pF
Output Capacitance
Coss
3300
4620
Reverse Transfer Capacitance
Crss
1200
2400
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
48
96
ns
Rise Time
tr
490
980
TurnOff Delay Time
td(off)
186
372
Fall Time
tf
384
768
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
QT
270
378
nC
Q1
50
Q2
150
Q3
118
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 100 Adc, VGS = 0 Vdc)
(IS = 100 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
1
0.9
1.2
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
145
ns
ta
90
tb
55
Reverse Recovery Stored
Charge
QRR
2.34
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
13
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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