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參數(shù)資料
| 型號： | MTY100N10E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | CASE 340G-02, TO-264, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 207K |
| 代理商： | MTY100N10E |
MTY100N10E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
1000000
100000
1000
100
1
0
40
80
100
120
1.8
1.6
1.4
1.2
0.8
0.6
50
25
0
25
50
75
100
125
150
0.011
0.0105
0.01
0.0095
0.009
0.008
ID, DRAIN CURRENT (AMPS)
15 V
0.018
0.016
0.014
0.012
0.006
0
100
200
25
°C
150
50
200
0
02
4
6
8
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
0
VGS = 10 V
VDS ≥ 10 V
VGS = 10 V
TJ = 100°C
55
°C
VGS = 10 V
VGS = 0 V
160
120
80
60
23
45
6
10
0
100
200
150
50
TJ = 125°C
0.01
0.008
20
100
40
20
78
9
0.0085
1
10
60
TJ = 25°C
80
40
9 V
8 V
7 V
6 V
5 V
TJ = 25°C
100
°C
25
°C
TJ = 55°C
25
°C
100
°C
VGS = 10 V
ID = 50 A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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