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參數(shù)資料
| 型號： | MTW32N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| 中文描述： | 32 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | MTW32N25E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
1.0E–05
1.0E–04
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
1.0E+00
1.0E+01
1.0
0.001
0.01
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
10
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
1.0
100
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
600
400
300
100
ID = 32 A
500
10
1.0
100
150
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100
μ
s
1 ms
dc
0.2
0.02
0.1
0.05
D = 0.5
SINGLE PULSE
0.01
200
0.1
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10 ms
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