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參數資料
| 型號： | MTW32N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| 中文描述： | 32 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 151K |
| 代理商： | MTW32N25E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
250
—
300
380
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
—
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 16 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 32 Adc)
(ID = 16 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.07
0.08
Ohm
—
—
2.2
—
2.6
2.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 16 Adc)
gFS
11
20
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
3800
5350
pF
Output Capacitance
—
726
1020
Reverse Transfer Capacitance
—
183
370
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD= 125 Vdc, ID = 32 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
td(on)
tr
td(off)
tf
—
31
60
ns
Rise Time
—
133
266
Turn–Off Delay Time
—
93
186
Fall Time
)
—
108
216
Gate Charge
(See Figure 8)
(VDS = 200 Vdc,D
(DS
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
97
136
nC
—
22
—
,
—
43
—
—
41
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 32 Adc, VGS = 0 Vdc)
(IS = 32 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.0
0.92
1.5
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 32 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
—
312
—
ns
—
220
—
,
tb
—
93
—
Reverse Recovery Stored Charge
QRR
—
3.6
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
13
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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