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參數(shù)資料
| 型號(hào)： | MTW32N25E |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM |
| 中文描述： | 32 A, 250 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 151K |
| 代理商： | MTW32N25E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
2
4
6
8
10
0
16
48
64
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
3
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4
5
6
8
0
16
32
48
64
ID
Figure 2. Transfer Characteristics
0
8
24
40
56
64
0.02
0.04
0.08
0.12
0.16
0
16
32
48
64
0.064
0.072
0.084
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.4
1.2
2.0
0
100
200
250
1
100
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
25
°
C
TJ = –55
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 2.0 A
7 V
6 V
5 V
56
8
24
32
40
0.06
0.1
0.14
0.8
1.6
8
24
40
56
0.068
0.076
0.08
10
1000
1
3
5
7
9
7
100
°
C
16
32
48
8
24
40
56
50
150
TJ = 125
°
C
100
°
C
25
°
C
15 V
VGS = 10 V
8 V
9 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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