參數(shù)資料
型號: MTW16N40E
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 16 A, 400 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
封裝: CASE 340K-01, 3 PIN
文件頁數(shù): 6/8頁
文件大?。?/td> 118K
代理商: MTW16N40E
MTW16N40E
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
AV
ALANCHE
ENERGY
(mJ)
t, TIME (ms)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
1.0
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
10
900
50
100
125
75
800
700
600
500
400
300
100
200
ID = 16 A
10
100
1000
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
0.1
1
10
100
I D
,DRAIN
CURRENT
(AMPS)
1
VGS = 20 V
SINGLE PULSE
TC = 25°C
THERMAL LIMIT
PACKAGE LIMIT
RDS(on) LIMIT
20
2
0.2
2
20
200
10 s
100 s
1ms
10ms
dc
相關(guān)PDF資料
PDF描述
MTW20N50E 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
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MTW32N25E 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
MTW35N15EG 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
MTW35N15E 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
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