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參數(shù)資料
| 型號： | MTW16N40E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 400 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封裝： | CASE 340K-01, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | MTW16N40E |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. XXX
1
Publication Order Number:
MTW16N40E/D
MTW16N40E
Preferred Device
Power MOSFET
16 Amps, 400 Volts
NChannel TO247
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a draintosource
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
400
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
400
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
Continuous
Continuous @ 100
°C
Single Pulse (tp ≤ 10 s)
ID
IDM
16
9.0
56
Adc
Apk
Total Power Dissipation
Derate above 25
°C
PD
180
1.4
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 16 Apk, L = 6.8 mH, RG = 25 )
EAS
870
mJ
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
RθJC
RθJA
0.70
40
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
Device
Package
Shipping
ORDERING INFORMATION
MTW16N40E
TO247
30 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
LL
= Location Code
Y
= Year
WW
= Work Week
MTW16N40E
LLYWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO247AE
CASE 340K
Style 1
NChannel
S
16 AMPERES
400 VOLTS
RDS(on) = 240 m
1
2
3
4
1
Gate
3
Source
4
Drain
2
Drain
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| MTW20N50E | 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
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| MTW32N25E | 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTW35N15EG | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| MTW35N15E | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW206N | 制造商:Knitter-Switch 功能描述:Bulk |
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| MTW20N50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
| MTW23N25E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 23 AMPERES 250 VOLTS RDS(on) = 0.11 OHM |
| MTW24N40E | 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
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