參數(shù)資料
型號: MTW16N40E
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 16 A, 400 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
封裝: CASE 340K-01, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 118K
代理商: MTW16N40E
MTW16N40E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
04
8
12
16
20
25
30
15
2
6
10
14
18
5
7 V
6 V
VGS = 10 V
VDS = 50 V
04
6
28
25
35
40
20
30
10
0
TJ = 55°C
25°C
100°C
5
15
TJ = 25°C
VGS = 10 V
15 V
0.20
0.32
0.24
08
32
428
VGS = 0 V
0
200
400
100
300
350
1.0
50
TJ = 125°C
0
5
15
25
0
0.45
0.75
0.6
0.3
0.15
10
20
30
TJ = 100°C
25°C
55°C
VGS = 10 V
50
0
0.5
1.0
2.0
3.0
25
0
25
50
75
100
125
150
VGS = 10 V
ID = 8 A
4.5 V
20
10
1000
0.26
0.28
0.30
0.22
12
20
16
24
2.5
1.5
0
100°C
6.5 V
8 V
250
150
相關(guān)PDF資料
PDF描述
MTW20N50E 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
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MTW32N25E 32 A, 250 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
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