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參數(shù)資料
| 型號(hào)： | MTV20N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 273K |
| 代理商： | MTV20N50E |
MTV20N50E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
25
50
75
100
125
150
t, TIME (s)
Figure 14. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 15. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
1200
800
400
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 20 V
SINGLE PULSE
TC = 25°C
1.0
10
100
0.1
dc
100
s
1 ms
10 ms
1000
ID = 20 A
1.0
0.1
0.001
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
1600
2000
0.1
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