參數(shù)資料
型號: MTV20N50E
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 20 A, 500 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 4/10頁
文件大?。?/td> 273K
代理商: MTV20N50E
MTV20N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
4
8
12
16
20
0
8
16
24
40
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
TJ = 25°C
VDS w 10 V
TJ = –55°C
25
°C
100
°C
VGS = 10 V
8 V
6 V
7 V
32
2.5
4
5
6
7
6.5
0
8
16
24
40
32
5 V
3
2
6
10
14
18
3.5
4.5
5.5
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
30
40
0
0.1
0.3
0.4
0.6
0.24
0.26
0.28
0.30
0.22
ID, DRAIN CURRENT (AMPS)
TJ = 100°C
25
°C
– 55
°C
TJ = 25°C
VGS = 10 V
0.2
0.5
10
20
0.32
VGS = 10 V
15 V
0
30
40
10
20
0.2
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
– 50
0
0.8
1.6
2.4
0
100
200
300
400
500
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
– 25
0
25
50
75
100
125
150
VGS = 0 V
0.4
1.2
2.0
50
150
250
350
450
100
°C
25
°C
TJ = 125°C
VGS = 10 V
ID = 10 A
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