參數(shù)資料
型號: MTSF2P02HDR2
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 3000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MICRO-8
文件頁數(shù): 6/12頁
文件大?。?/td> 280K
代理商: MTSF2P02HDR2
MTSF2P02HD
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 2.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(Cpk
≥ 2.0)
(Notes 2. & 4.)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
20
12.7
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
0.015
0.03
1.0
25
Adc
GateBody Leakage Current (VGS = ± 8.0 Vdc, VDS = 0)
IGSS
0.05
100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Note 4.)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
1.1
2.5
1.4
Vdc
mV/
°C
Static DraintoSource OnResistance
(Cpk
≥ 2.0) (Note 4.)
(VGS = 4.5 Vdc, ID = 2.4 Adc)
(VGS = 2.7 Vdc, ID = 1.2 Adc)
RDS(on)
70
100
90
120
m
Forward Transconductance (VDS = 10 Vdc, ID = 1.2 Adc)
(Note 2.)
gFS
2.6
4.4
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
15 Vd
V
0Vd
Ciss
550
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
375
Transfer Capacitance
f = 1.0 MHz)
Crss
150
SWITCHING CHARACTERISTICS (Note 4.)
TurnOn Delay Time
td(on)
10
ns
Rise Time
(VDS = 10 Vdc, ID = 2.4 Adc,
tr
27
TurnOff Delay Time
(VDS
10 Vdc, ID
2.4 Adc,
VGS = 4.5 Vdc, RG = 6.0 ) (Note 2.)
td(off)
75
Fall Time
tf
110
TurnOn Delay Time
td(on)
22
Rise Time
(VDD = 10 Vdc, ID = 1.2 Adc,
tr
110
TurnOff Delay Time
(VDD
10 Vdc, ID
1.2 Adc,
VGS = 2.7 Vdc, RG = 6.0 ) (Note 2.)
td(off)
55
Fall Time
tf
85
Gate Charge
QT
12.5
18
nC
(VDS = 16 Vdc, ID = 2.4 Adc,
Q1
1.5
(VDS
16 Vdc, ID
2.4 Adc,
VGS = 4.5 Vdc) (Note 2.)
Q2
6.4
Q3
5.8
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 2.4 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 2.4 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.85
0.71
1.0
Vdc
Reverse Recovery Time
trr
179
ns
(IS = 2.4 Adc, VGS = 0 Vdc,
ta
39
(IS
2.4 Adc, VGS
0 Vdc,
dIS/dt = 100 A/s) (Note 2.)
tb
140
Reverse Recovery Stored Charge
QRR
0.28
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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