參數(shù)資料
型號(hào): MTSF2P02HDR2
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 3000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MICRO-8
文件頁(yè)數(shù): 10/12頁(yè)
文件大小: 280K
代理商: MTSF2P02HDR2
MTSF2P02HD
http://onsemi.com
7
I S
,SOURCE
CURRENT
t, TIME
Figure 13. Reverse Recovery Time (trr)
di/dt = 300 A/
s
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curve (Figure
14) defines the maximum simultaneous draintosource
voltage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (TC) of
25
°C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
Resistance General Data and Its Use.”
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) TC)/(RθJC).
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
1
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 8 V
SINGLE PULSE
TC = 25°C
10
0.1
dc
10 ms
1
100
1 ms
100
s
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