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參數(shù)資料
| 型號： | MTP75N06HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS |
| 中文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 275K |
| 代理商： | MTP75N06HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
60
—
68
60.4
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 V)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
5.0
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
(Cpk
≥
5.0) (3)
VGS(th)
2.0
—
3.0
8.38
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 37.5 Adc)
(Cpk
≥
2.0) (3)
RDS(on)
—
8.3
10
m
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125
°
C)
VDS(on)
—
—
0.7
0.53
0.9
0.8
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 37.5 Adc)
gFS
15
32
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
2800
3920
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
928
1300
Reverse Transfer Capacitance
—
180
252
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
18
26
ns
Rise Time
(VDS = 30 Vdc, ID = 75 Adc,
VGS = 10 Vdc,
—
218
306
Turn–Off Delay Time
—
67
94
Fall Time
—
125
175
Gate Charge
VGS = 10 Vdc)
—
71
100
nC
(VDS = 48 Vdc, ID = 75 Adc,
—
16.3
—
—
31
—
—
29.4
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 75 Adc, VGS = 0 Vdc)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.97
0.88
1.1
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
56
—
ns
(IS = 75 Adc, VGS = 0 Vdc,
—
44
—
—
12
—
Reverse Recovery Stored Charge
QRR
—
0.103
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
3.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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