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參數(shù)資料
| 型號(hào)： | MTP75N06HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS |
| 中文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 275K |
| 代理商： | MTP75N06HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS
E–FET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
Ultra Low RDS(on), High–Cell Density, HDTMOS
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Single Pulse
60
Vdc
±
20
±
30
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
75
50
225
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
150
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 75 Apk, L = 0.177 mH, RG = 25
)
500
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
TL
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTP75N06HD/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
75 AMPERES
RDS(on) = 10.0 mOHM
60 VOLTS
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP7N20E | TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS |
| MTP7P06 | POWER FIELD EFFECT TRANSISTOR |
| MTP9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
| MTP9N25 | TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
| MTSF1P02HD | SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP75S | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 75A |
| MTP786K050P1C | 功能描述:鉭質(zhì)電容器-濕式 78uF 50V 10% "C" RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk |
| MTP786M050P1C | 制造商:Mallory Sonalert Products Inc 功能描述: |
| MTP7N06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7A I(D) | TO-220AB |
| MTP7N18 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 7A, 150-200V |
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