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參數(shù)資料
| 型號： | MTSF1P02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM |
| 中文描述： | 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 342K |
| 代理商： | MTSF1P02HD |
1
Motorola, Inc. 1996
Medium Power Surface Mount Products
Micro8
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted) *
Rating
Symbol
VDSS
VDGR
VGS
ID
ID
IDM
PD
Value
20
20
±
8.0
1.8
1.6
14.4
1.8
14.3
Unit
Vdc
Vdc
Vdc
Adc
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25
°
C (2)
Drain Current
— Continuous @ TA = 70
°
C (2)
Drain Current
— Pulsed Drain Current (3)
Total Power Dissipation @ TA = 25
°
C (1)
Linear Derating Factor (1)
Total Power Dissipation @ TA = 25
°
C (2)
Linear Derating Factor (2)
Apk
Watts
mW/
°
C
Watts
mW/
°
C
°
C
PD
0.78
6.25
Operating and Storage Temperature Range
THERMAL RESISTANCE
TJ, Tstg
– 55 to 150
Rating
Symbol
R
θ
JA
R
θ
JA
Typ.
55
125
Max.
70
160
Unit
°
C/W
Thermal Resistance — Junction to Ambient, PCB Mount (1)
Thermal Resistance
— Junction to Ambient, PCB Mount (2)
* Negative signs for P–Channel device omitted for clarity.
(1) When mounted on 1 inch square FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)
(2) When mounted on minimum recommended FR–4 or G–10 board (VGS = 4.5 V, @ Steady State)
(3) Repetitive rating; pulse width limited by maximum junction temperature.
DEVICE MARKING
ORDERING INFORMATION
AB
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
4000 units
MTSF1P02HDR2
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Berquist Company.
REV 1
Order this document
by MTSF1P02HD/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
SINGLE TMOS
POWER FET
1.8 AMPERES
20 VOLTS
RDS(on) = 0.16 OHM
Motorola Preferred Device
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
CASE 846A–02, Style 1
Micro8
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| MTSF2P02HD | SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM |
| MTSF2P03HD | SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM |
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| MTV10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTSF2P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM |
| MTSF2P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM |
| MTSF2P03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:MOSFET Transistor, P-Channel, SO 制造商:ON Semiconductor 功能描述:MOSFET Transistor, P-Channel, SO 制造商:MOTOROLA 功能描述: |
| MTSF3203 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| MTSF3N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
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