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參數(shù)資料
| 型號： | MTSF3203 |
| 廠商： | Motorola, Inc. |
| 英文描述： | SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| 中文描述： | 功率MOSFET單任務(wù)操作系統(tǒng)4.9安培20伏特的RDS（on）\u003d 0.05歐姆 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MTSF3203 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Micro8
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1 mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
DEVICE MARKING
ORDERING INFORMATION
3A
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
4000 units
MTSF3203R2
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTSF3203/D
SINGLE TMOS
POWER MOSFET
4.9 AMPERES
20 VOLTS
RDS(on) = 0.05 OHM
CASE 846A–02, Style 1
Micro8
Motorola Preferred Device
D
S
G
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTV10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| MTV20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM |
| MTV6N100E | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
| MTW33N10E | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTW7N80E | TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTSF3N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
| MTSF3N02HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 6.1A 8-Pin Micro T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTSF3N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM |
| MTSF3N03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 5.7A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTSF3N03HDR2G | 功能描述:MOSFET NFET 30V 3A 40MO RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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