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參數(shù)資料
| 型號： | MTW33N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| 中文描述： | 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 227K |
| 代理商： | MTW33N10E |
1
MOTOROLA
1
1
Motorola, Inc. 1994
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N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
VDGR
VGS
VGSM
100
Vdc
Drain-Gate Voltage (RGS = 1.0 M
)
Gate-Source Voltage — Continuous
Gate-Source Voltage
— Non-Repetitive (tp
≤
10 ms)
100
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous @ 25
°
C
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
ID
ID
IDM
33
20
99
Adc
Apk
PD
125
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain-to-Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 33 Apk, L = 1.000 mH, RG = 25
)
545
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
1.0
40
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E-FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTW33N10E/D
SEMICONDUCTOR TECHNICAL DATA
3/94
TMOS POWER FET
33 AMPERES
100 VOLTS
RDS(on) = 0.06 OHM
CASE 340F, Style 1
TO-247AE
Motorola Preferred Device
D
S
G
N-Channel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW35N15E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM |
| MTW45N10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| MTW45N10E | 制造商:Rochester Electronics LLC 功能描述: |
| MTW4N80 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTW4N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
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