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參數(shù)資料
| 型號： | MTP75N03HDL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | OSCILLATORS 100PPM -10+70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD |
| 中文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MTP75N03HDL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(Cpk
≥
2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS
25
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 25 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 V)
IDSS
—
—
—
—
100
500
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
Temperature Coefficient (Negative)
(Cpk
≥
3.0) (3)
VGS(th)
1.0
1.5
2.0
Vdc
mV/
°
C
Static Drain–Source On–Resistance
(Cpk
≥
2.0) (3)
(VGS = 5.0 Vdc, ID = 37.5 Adc)
RDS(on)
—
6.0
9.0
m
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 75 Adc)
(ID = 37.5 Adc, TJ = 125
°
C)
VDS(on)
—
—
—
0.68
0.6
Vdc
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
gFS
15
55
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
4025
5635
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
1353
1894
Reverse Transfer Capacitance
—
307
430
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rg = 4.7
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
24
48
ns
Rise Time
(VDS = 15 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc,
—
493
986
Turn–Off Delay Time
—
60
120
Fall Time
—
149
300
Gate Charge
VGS = 5.0 Vdc)
—
61
122
nC
(VDS = 24 Vdc, ID = 75 Adc,
—
14
28
—
33
66
—
27
54
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 75 Adc, VGS = 0 Vdc)
(IS = 75 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.97
0.87
1.1
—
Vdc
Reverse Recovery Time
s)
dIS/dt = 100 A/
μ
trr
—
58
—
ns
(IS = 75 Adc, VGS = 0 Vdc,
ta
tb
—
27
—
—
30
—
Reverse Recovery Stored Charge
QRR
—
0.088
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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